Basel Universität

Alexander Bubendorf

PhD in 2016
MSc. in Micro - Nanoelectronics


baran

Research interests

nc-AFM

Publications

Latest Papers (show all)

A robust AFM-based method for locally measuring the elasticity of samples
A. Bubendorf, S. Walheim, T. Schimmel and E. Meyer
Beilstein J. Nanotechnol., 9, (2018), 1-10, pdf.
Junction Barrier Schottky (JBS) Rectifier Interface Engineering Facilitated by Two-Dimensional (2D) Dopant Imaging
H.R. Rossmann, U. Gysin, A. Bubendorf, T. Glatzel, S.A. Reshanov, A. Zhang, A. Schöner, T.A. Jung, E. Meyer and H. Bartolf
Materials Science Forum, 858, (2016), 497-500, pdf.
Development of Power Semiconductors by Quantitative Nanoscale Dopant Imaging
H. Bartolf, U. Gysin, H. Rossmann, A. Bubendorf, Th. Glatzel, T. Jung, E. Meyer, M. Zimmermann, S. Reshanov and A. Schoner
IEEE 27th International Symposium on Power Semiconductor Dev, (2015), 281-284, pdf.
Two-Dimensional Carrier Profiling on Lightly Doped n-type 4H-SiC Epitaxially Grown Layers
H. Rossmann, U. Gysin, A. Bubendorf, Th. Glatzel, S. Reshanov, A. Schöner, T. Jung, E. Meyer and H. Bartolf
Material Science Forum, 821-823, (2015), 269-272, pdf.