Basel Universität

Alexander Bubendorf

PhD in 2016
MSc. in Micro - Nanoelectronics


baran

Research interests

nc-AFM

Publications

Latest Papers (show all)

Junction Barrier Schottky (JBS) Rectifier Interface Engineering Facilitated by Two-Dimensional (2D) Dopant Imaging
H.R. Rossmann, U. Gysin, A. Bubendorf, T. Glatzel, S.A. Reshanov, A. Zhang, A. Schöner, T.A. Jung, E. Meyer and H. Bartolf
Materials Science Forum, 858, (2016), 497-500, pdf.
Development of Power Semiconductors by Quantitative Nanoscale Dopant Imaging
H. Bartolf, U. Gysin, H. Rossmann, A. Bubendorf, Th. Glatzel, T. Jung, E. Meyer, M. Zimmermann, S. Reshanov and A. Schoner
IEEE 27th International Symposium on Power Semiconductor Dev, (2015), 281-284, pdf.
Two-Dimensional Carrier Profiling on Lightly Doped n-type 4H-SiC Epitaxially Grown Layers
H. Rossmann, U. Gysin, A. Bubendorf, Th. Glatzel, S. Reshanov, A. Schöner, T. Jung, E. Meyer and H. Bartolf
Material Science Forum, 821-823, (2015), 269-272, pdf.
Systematic study of the dolomite (104) surface by bimodal dynamic force microscopy in ultra-high vacuum
S. Kawai, C. M Pina, A. Bubendorf, G. Fessler, T. Glatzel, E. Gnecco and E. Meyer
Nanotechnology, 24, (5), (2013), 055702, pdf.